ATF-55143 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
Manufacturer
ATF-55143
HP => Agilent Technologies
ATF-55143 Datasheet PDF : 22 Pages
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ATF-55143 Typical Performance Curves
30
1.2
25
20
15
10
2V, 10 mA
2.7V, 10 mA
5
0
1
2
3
45
6
FREQUENCY (GHz)
Figure 6. Gain vs. Bias over Frequency.[1]
1.0
0.8
0.6
0.4
0.2
2V, 10 mA
2.7V, 10 mA
0
0
1
2
3
45
6
FREQUENCY (GHz)
Figure 7. Fmin vs. Frequency and Bias.
27
25
23
21
19
17
2V, 10 mA
2.7V, 10 mA
15
01
2
3
45
6
FREQUENCY (GHz)
Figure 8. OIP3 vs. Bias over Frequency.[1]
15
10
5
0
2V, 10 mA
2.7V, 10 mA
-5
0
1
2
3
45
6
FREQUENCY (GHz)
Figure 9. IIP3 vs. Bias over Frequency.[1]
16
14
12
10
2V, 10 mA
2.7V, 10 mA
8
0
1
2
3
45
6
FREQUENCY (GHz)
Figure 10. P1dB vs. Bias over Frequency.[1,2]
21
20
19
18
17
2V
16
2.7V
3V
15
0 5 10 15 20 25 30 35
Ids (mA)
Figure 11. Gain vs. Ids and Vds at 2 GHz.[1]
0.60
0.55
0.50
0.45
0.40
0.35
0.30
2V
2.7V
0.25
3V
0.20
0 5 10 15 20 25 30 35
Ids (mA)
Figure 12. Fmin vs. Ids and Vds at 2 GHz.
35
33
31
29
27
25
23
2V
2.7V
21
3V
19
0 5 10 15 20 25 30 35
Ids (mA)
Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1]
16
14
12
10
8
6
4
2V
2.7V
2
3V
0
0 5 10 15 20 25 30 35
Ids (mA)
Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1]
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. P1dB measurements are performed with
passive biasing. Quiescent drain current, Idsq,
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
4
point. At lower values of Idsq, the device is
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a VDS =
2.7V and Idsq = 5 mA, Id increases to 15mA as
a P1dB of +14.5 dBm is approached.
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