BAS16LD View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BAS16LD Datasheet PDF : 11 Pages
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NXP Semiconductors
BAS16LD
Single high-speed switching diode
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
-
voltage
VR
reverse voltage
-
IF
forward current
[1]
IFRM
repetitive peak forward
tp ≤ 0.5 μs;
-
current
δ ≤ 0.25
IFSM
Ptot
Tj
Tamb
Tstg
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
square wave
tp = 1 μs
tp = 1 ms
tp = 1 s
Tamb ≤ 25 °C
[2]
-
-
-
[1][3] -
-
−55
−65
[1] Device mounted on an FR4 PCB with 60 μm copper strip line.
[2] Tj = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Max Unit
100
V
100
V
215
mA
500
mA
4
A
1
A
0.5
A
250
mW
150
°C
+150 °C
+150 °C
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1] Device mounted on an FR4 PCB with 60 μm copper strip line.
[2] Reflow soldering is the only recommended soldering method.
Min Typ Max Unit
[1][2] -
-
500 K/W
BAS16LD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
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