Philips Semiconductors
High-speed switching diode array
Product specification
BAV756S
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
PINNING
PIN
1
2
3
4
5
6
anode (a1)
cathode (k1)
common anode
cathode (k2)
anode (a2)
common cathode
DESCRIPTION
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
6 54
handbook, halfpage
654
DESCRIPTION
The BAV756S consists of four
high-speed switching diodes
fabricated in planar technology, and
encapsulated in the small SMD
SOT363 plastic package. One pair of
diodes has a common cathode; the
other pair has a common anode.
12
Top view
3
MSA370
1
2
3 MGL158
Marking code: A7t.
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
single diode loaded; see Fig.2
all diodes loaded; see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts = 60 °C; note 1
Note
1. One or more diodes loaded.
MIN. MAX. UNIT
−
85
V
−
75
V
−
250
mA
−
100
mA
−
450
mA
−
4
A
−
1
A
−
0.5
A
−
350
mW
−65
+150 °C
−65
+150 °C
1997 Oct 21
2