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Part Name
Description
BB502C View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
BB502C Datasheet PDF : 13 Pages
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BB502C
Drain Current vs. Gate Resistance
20
15
V
DS
= V
G1
= 5 V
V
G2S
= 4 V
10
5
0
100
200
500
1000
Gate Resistance R
G
(k
Ω
)
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
V
DS
= 5 V
5
R
G
= 180 k
Ω
f = 900 MHz
0
1
2
3
4
Gate2 to Source Voltage V
G2S
(V)
Noise Figure vs.
Gate2 to Source Voltage
5
V
DS
= 5 V
4
R
G
= 180 k
Ω
f = 900 MHz
3
2
1
1
2
3
4
Gate2 to Source Voltage V
G2S
(V)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 V
DS
= 5 V
R
G
= 180 k
Ω
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V
G2S
(V)
8
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