BB506C View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

BB506C

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB506C

900 MHz Power Gain, Noise Figure Test Circuit

VG1 VG2

C4

C5

VD

C6

Input (50 Ω)

R1

R2

C3

G2

G1

L1 L2

R3

RFC

D

L3 L4

S

Output (50 Ω)

C1

C2

Preliminary

C1, C2 :

C3 :

C4 to C6 :

R1 :

R2 :

R3 :

Variable Capacitor (10 pF MAX)

Disk Capacitor (1000 pF)

Air Capacitor (1000 pF)

100 kΩ

47 kΩ

4.7 kΩ

L1:

10

21

L3:

29

L2:

26

L4:

18

(φ1 mm Copper wire)

Unit : mm

RFC : f1 mm Copper wire with enamel 4 turns inside dia 6 mm

R07DS0288EJ0200 Rev.2.00

Mar 28, 2011

Page 3 of 8

Share Link: