BC487 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC487

High Current Transistors

ON Semiconductor 

−0.8

−1.2

−1.6

−2.0

RqVB for VBE

BC487, BC487B

−1.0

TJ = 25°C

−0.8

VBE(sat) @ IC/IB = 10

−0.6

VBE(on) @ VCE = −1.0 V

−0.4

−2.4

−2.8

0.5 1.0 2.0

5.0 10 20

50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

−0.2

VCE(sat) @ IC/IB = 10

0

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

−1.0

TJ = 25°C

−0.8

−0.6

−0.4

IC = −10 mA −50 mA −100 mA

−0.2

−250 mA −500 mA

0

−0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50

IB, BASE CURRENT (mA)

Figure 12. Collector Saturation Region

−0.8

−1.2

−1.6

−2.0

RqVB for VBE

−2.4

−2.8

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500

IC, COLLECTOR CURRENT (mA)

Figure 13. Base−Emitter Temperature Coefficient

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