BC488B View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC488B

High Current Transistors

ON Semiconductor 

BC488B

−1.0 k

−700

−500

−300

−200

−100

−70

−50

−30

−20

TA = 25°C

1.0 s

TC = 25°C

100 ms

1.0 ms

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

−10

−1.0

BC490

−2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 6. Active Region, Safe Operating Area

1.0

TJ = 25°C

0.8

VBE(sat) @ IC/IB = 10

0.6

VBE(on) @ VCE = 1.0 V

0.4

0.2

VCE(sat) @ IC/IB = 10

0

0.5 1.0 2.0

5.0 10 20

50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 7. “On” Voltages

1.0

−0.8

TJ = 25°C

0.8

−1.2

0.6

IC = 10 mA

50

mA

100 mA

250 mA 500 mA

−1.6

0.4

−2.0

RqVB for VBE

0.2

−2.4

0

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

IC, COLLECTOR CURRENT (mA)

Figure 8. Collector Saturation Region

−2.8

0.5 1.0 2.0

5.0 10 20

50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 9. Base−Emitter Temperature Coefficient

400

TJ = 125°C

200

25°C

−55°C

100

80

60

40

−0.5 −0.7 −1.0

−2.0 −3.0

−5.0 −7.0 −10

−20 −30

IC, COLLECTOR CURRENT (mA)

Figure 10. DC Current Gain

−50 −70 −100

VCE = −1.0 V

−200 −300 −500

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