BC807DS View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC807DS Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose double transistor
Product specification
BC807DS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to note 1
ambient
CONDITIONS
VALUE
208
UNIT
K/W
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
ICBO
IEBO
hFE
VCEsat
VBE
collector-base cut-off current
VCB = −20 V; IE = 0
−
−
VCB = −20 V; IE = 0; Tj = 150 °C −
−
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
DC current gain
VCE = −1 V; IC = −100 mA; note 1 160 −
VCE = −1 V; IC = −500 mA; note 1 40
−
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 −
−
base-emitter voltage
VCE = −1 V; IC = −500 mA;
notes 1 and 2
−
−
Cc
collector capacitance
fT
transition frequency
VCB = −10 V; IE = Ie = 0; f = 1 MHz −
9
VCE = −5 V; IC = −10 mA;
f = 100 MHz
80
−
−100 nA
−5
µA
−100 nA
400
−
−700 mV
−1.2 V
−
pF
−
MHz
Notes
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. VBE decreases by approximately −2 mV/K with increasing temperature.
2002 Nov 22
3
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