BC817U(2001) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BC817U Datasheet PDF : 4 Pages
| |||
BC817U
NPN Silicon Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
C1
B2
E2
6
5
4
4
5
6
3
2
1
VPW09197
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BC817U
Marking
6Bs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
45
50
5
500
1
100
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
105
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1
Nov-29-2001
Share Link: 