BC857BT View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BC857BT Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BC856T; BC857T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBE
Cc
Ce
fT
F
collector cut-off current
IE = 0; VCB = −30 V
−
−
IE = 0; VCB = −30 V; Tj = 150 °C
−
−
emitter cut-off current
IC = 0; VEB = −5 V
−
−
DC current gain
IC = −2 mA; VCE = −5 V
BC856AT; BC857AT
125 −
BC856BT; BC857BT
220 −
BC857CT
420 −
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−
IC = −100 mA; IB = −5 mA; note 1
−
−
base-emitter voltage
IC = −2 mA; VCE = −5 V
−600 −
IC = −10 mA; VCE = −5 V
−
−
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz −
10
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100 −
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
−
f = 1 kHz; B = 220 Hz
−15 nA
−5 µA
−100 nA
250
475
800
−200
−400
−750
−820
2.5
−
−
10
mV
mV
mV
mV
pF
pF
MHz
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 26
3
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