BCR8PM-12LD-A8 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
BCR8PM-12LD-A8 Datasheet PDF : 8 Pages
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BCR8PM-12LD
Performance Curves
Maximum On-State Characteristics
102
7
5
Tj = 25°C
3
2
101
7
5
3
2
100
7
5
3
2
10-1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
On-State Voltage (V)
Gate Characteristics (I, II and III)
102
7
5
3
2
VGM = 10 V
101
7
5
3
VGT = 1.5 V
2
PGM =5 W
PG(AV) = 0.5 W
IGM = 2 A
100
7
5
3
2
10-1
101
23
IFGT I
IRGT II
IRGT III
5 7102 2 3
VGD = 0.2 V
5 7 103 2 3 5 7 104
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
7
Typical Example
5
3
2
102
7
5
3
2
101
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G1564-0100 Rev.1.00 Jul 06, 2007
Page 3 of 7
Rated Surge On-State Current
60
50
40
30
20
10
0
100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current vs.
Junction Temperature
103
7
Typical Example
5
IRGTIII
3
2
102
7
IFGTI
5
3
2
IRGTI
101
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1
100
101
102
Conduction Time (Cycles at 60 Hz)
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