BCV61 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BCV61

NPN Silicon Double Transistors

Siemens AG 

BCV 61

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics for transistor T2

Base-emitter forward voltage

IE = 10 µA

IE = 250 mA

Matching of transistor T1 and transistor T2

at IE2 = 0.5 mA and VCE1 = 5 V

TA = 25 ˚C

TA = 150 ˚C

Thermal coupling of transistor T1 and

transistor T21) T1: VCE = 5 V

Maximum current for thermal stability of IC1

AC characteristics for transistor T1

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, IC = iC = 0, f = 1 MHz

Input capacitance

VEB = 0.5 V, IC = iC = 0, f = 1 MHz

Noise figure

IC = 200 µA, VCE = 5 V, RS = 2 kΩ

f = 1 kHz, B = 200 Hz

Input impedance

IC = 1 mA, VCE = 10 V, f = 1 kHz

Open-circuit reverse voltage transfer ratio

IC = 1 mA, VCE = 10 V, f = 1 kHz

Short-circuit forward current transfer ratio

IC = 1 mA, VCE = 10 V, f = 1 kHz

Open-circuit output admittance

IC = 1 mA, VCE = 10 V, f = 1 kHz

Symbol

Values

Unit

min. typ. max.

VBES

0.4 –

–

–

IC1 / IC2 0.7

–

IC1 / IC2 0.7

–

IE2

–

5

V

–

1.8

–

1.3

1.3

–

mA

fT

–

250 –

MHz

Ccb

–

3

–

pF

Cibo

–

8

–

F

–

2

–

dB

h11e

–

4.5 –

kΩ

h12e

–

2

–

10– 4

h21e

100 –

900 –

h22e

–

30 –

µS

1) Without emitter resistor. Device mounted on alumina 15 mm × 16.5 mm × 0.7 mm.

Semiconductor Group

3

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