BCV62A(2001) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BCV62A Datasheet PDF : 5 Pages
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PNP Silicon Double Transistor
To be used as a current mirror
Good thermal coupling and VBE matching
4
High current gain
Low collector-emitter saturation voltage
C1 (2)
C2 (1)
Tr.1
Tr.2
BCV62
3
2
1 VPS05178
Type
BCV62A
BCV62B
BCV62C
Marking
3Js
3Ks
3Ls
E1 (3)
E2 (4)
EHA00013
Pin Configuration
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
170
Unit
V
mA
mW
°C
K/W
1
Jul-11-2001
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