BCX56-16TA View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

BCX56-16TA

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Diodes Incorporated. 

BCX 54 /55 /56

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage (Note 8)

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

BCX54

BCX55

BCX56

BCX54

BCX55

BCX56

Static Forward Current Transfer

Ratio (Note 6)

All versions

10 gain grp

16 gain grp

Collector-Emitter Saturation Voltage (Note 8)

Base-Emitter Turn-On Voltage (Note 8)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

Min

Typ

Max

Unit

Test Condition

45

60

—

—

V IC = 100µA

100

45

60

—

—

V IC = 10mA

80

6

—

—

V IE = 100µA

-

—

0.1

20

µA VCB = 30V

VCB = 30V, TA = +150°C

-

—

20

nA VEB = 5V

25

—

-

IC = 5mA, VCE = 2V

40

—

250

IC = 150mA, VCE = 2V

25

—

-

— IC = 500mA, VCE = 2V

63

—

160

IC = 150mA, VCE = 2V

100

—

250

IC = 150mA, VCE = 2V

—

—

0.5

V IC = 500mA, IB = 50mA

—

—

1.0

V IC = 500mA, VCE = 2V

Transition Frequency

Output Capacitance

fT

Cobo

150

—

—

—

-

MHz

IC = 50mA, VCE = 10V

f = 100MHz

25

pF VCB = 10V, f = 1MHz

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

0.8

0.6

0.4

0.2

0

0

1

2

3

4

5

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 1 Typical Collector Current

vs. Collector-Emitter Voltage

250

200

150

100

50

0

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Fig. 2 Typical DC Current Gain vs. Collector Current

BCX 54 / 55 / 56

Datasheet Number: DS35369 Rev. 5 – 2

3 of 6

www.diodes.com

October 2012

© Diodes Incorporated

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