BD178 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BD178

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

BD176 BD178 BD180

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A

VBE

Base-emitter on voltage

IC=-1A ; VCE=-2V

VCEO(SUS)

Collector-emitter

sustaining voltage

BD176

BD178 IC=-0.1A; IB=0

BD180

BD176 VCB=-45V; IE=0

ICBO

Collector cut-off current BD178 VCB=-60V; IE=0

BD180 VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-150mA ; VCE=-2V

hFE-2

DC current gain

IC=-1A ; VCE=-2V

fT

Transition frequency

IC=-250mA; VCE=-10V

‹ hFE-1 Classifications

6

10

40-100

63-160

16

100-250

MIN TYP. MAX UNIT

-0.8

V

-1.3

V

-45

-60

V

-80

-100 μA

-1

mA

40

250

15

3

MHz

※ classification 16 :only BD176

2

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