BD8381EFV-M View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
BD8381EFV-M Datasheet PDF : 21 Pages
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BD8381EFV-M
Technical Note
●Electrical characteristics (Unless otherwise specified, VCC=12V Ta=25℃)
Parameter
Symbol
Limits
Min Typ
Max.
Circuit current
ICC
-
4.5
7.0
Standby current
[VREG Block (VREG)]
Reference voltage
[OUTH Block]
OUTH high-side ON resistance
OUTH low-side ON resistance
Over-current protection
operating voltage
[OUTL Block]
OUTL high-side ON resistance
OUTL low –side ON resistance
[SW Block]
SW low -side ON resistance
[PWMOUT Block]
PWMOUT high-side ON resistance
PWMOUT low-side ON resistance
[Error Amplifier Block]
IST
VREG
RONHH
RONHL
VOLIMIT
RONLH
RONLL
RONSW
RONPWMH
RONPWML
-
4.5
1.5
1.0
VCC
-0.68
2.0
1.0
2.0
2.0
1.0
0
5.0
3.5
2.5
VCC
-0.60
4.0
2.5
4.5
4.0
2.5
8
5.5
7.0
5.0
VCC
-0.52
8.0
5.0
9.0
8.0
5.0
Reference voltage
VREF2
0.190 0.200 0.210
COMP sink current
ICOMPSINK 50
75
100
COMP source current
ICOMPSOURCE -100 -75
-50
[Oscillator Block]
Oscillating frequency
FOSC
285 300 315
[OVP Block]
Over-voltage detection
reference voltage
VOVP
1.9
2.0
2.1
OVP hysteresis width
VOHYS
0.45 0.55 0.65
[UVLO Block ]
UVLO voltage
VUVLO
4.0
4.3
4.6
UVLO hysteresis width
VUHYS
50
150 250
[PWM Generation circuit Block]
VTH Threshold voltage
VTH1
3 2/3VREG 3.7
VTH Threshold voltage
VTH2
1 1/3VREG 2
PWM minimum ON width
TPWMON
25
-
-
LED OPEN detection function
VOPEN
30
50
70
LED SHORT detection function
VSHORT
100 200 400
LED GND short protection timer
TSHORT
100 150 200
[Logic Inputs]
Input HIGH voltage
VINH
3.0
-
-
Input LOW voltage
VINL
GND
-
1.0
Input current 1
IIN
20
35
50
Input current 2
IEN
25
40
55
[FAIL Output (open drain) ]
FAIL LOW voltage
VOL
-
0.1
0.2
◎ This product is not designed for use in radioactive environments.
Unit
Conditions
mA
EN=Hi, SYNC=Hi,
RT=OPEN, CIN=10µF
µA EN=Low
V IREG=-5mA，CREG=10µF
Ω ION=-10mA
Ω ION=10mA
V
Ω ION=-10mA
Ω ION=10mA
Ω IONSW=10mA
Ω IONPWMH=-10mA
Ω IONPWML=10mA
V
FB-COMPShort,
Ta=-40℃～125℃
µA VFB>0.2V, Vcomp=1V
µA VFB <0.2V, Vcomp=1V
KHz RT=100kΩ
V VOVP=Sweep up
V VOVP= Sweep down
V VCC : Sweep down
mV VCC : Sweep up
V
V
µs
mV
mV VSHORT≧lVLEDR-VLEDCl
ms CT=0.1µF
V
V
µA VIN=5V (SYNC/DRLIN)
µA VEN=5V (EN)
V IOL=0.1mA
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© 2011 ROHM Co., Ltd. All rights reserved.
2/20
2011.04 - Rev.A
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