BF410A View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF410A Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
BF410A to D
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
VGS = 0 instead of ID = 5 mA
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
VDS = 10 V; VGS = 0; Tamb = 25 °C for BF410A and B
VDS = 10 V; ID = 5 mA; Tamb = 25 °C for BF410C and D
BF410A B
C
D
Cis
max.
5
5
5
5 pF
gis
typ.
100
90
60
50 µS
typ.
0.5
0.5
0.5
0.5 pF
Crs
max.
0.7
0.7
0.7
0.7 pF
yfs
yfs
yfs
min.
min.
typ.
2.5
4.0
4.0
3.5 mS
−
−
6.0
7.0 mS
3.5
5.5
5.0
5.0 mS
Cos
max.
3
3
3
3 pF
gos
max.
60
80
100
120 µS
gos
typ.
35
55
70
90 µS
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS; f = 100 MHz
F
typ.
1.5
1.5
1.5
1.5 dB
1.5
handbook, halfpage
Crs
(pF)
1
MDA277
0.5
typ
0
0
4
8
12
16
20
VDS (V)
Fig.2 VGS = 0 for BF410A and BF410B;
ID = 5 mA for BF410C and BF410D;
f = 1 MHz; Tamb = 25 °C.
10
handbook, halfpage
|yfs|
(mA/V)
8
6
BF410A
4
BF410C
BF410B
MDA278
BF410D
2
0
0
5
10 ID (mA) 15
Fig.3 VDS 10 V; f = 1 kHz; Tamb = 25 °C; typical values.
December 1990
4
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