BF1203 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BF1203 Datasheet PDF : 20 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
Amplifier a scattering parameters
VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
50
0.987
5.12
2.67
100
0.983
10.24
2.66
200
0.976
20.37
2.61
300
0.946
30.36
2.54
400
0.919
40.15
2.47
500
0.885
49.55
2.37
600
0.851
58.50
2.26
700
0.815
67.28
2.15
800
0.778
75.03
2.02
900
0.747
83.30
1.95
1 000
0.710
90.47
1.83
ANGLE
(deg)
174.07
168.16
156.64
145.05
134.13
132.32
113.25
103.20
93.78
84.84
75.92
s12
MAGNITUDE
(ratio)
0.0006
0.0012
0.0023
0.0030
0.0032
0.0029
0.0024
0.0023
0.0035
0.0070
0.0104
ANGLE
(deg)
85.79
83.27
78.22
73.26
71.40
74.34
90.33
129.94
172.18
171.55
172.88
s22
MAGNITUDE
(ratio)
0.997
0.996
0.992
0.986
0.980
0.972
0.965
0.960
0.950
0.951
0.947
ANGLE
(deg)
1.72
3.42
6.77
10.12
13.33
16.56
19.74
22.90
26.05
29.10
32.25
2001 Apr 25
10
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