BF1203 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BF1203 Datasheet PDF : 20 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 C
23
input capacitance at gate 1 f = 1 MHz
input capacitance at gate 2 f = 1 MHz
output capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
f = 10.7 MHz; GS = 20 mS; BS = 0
f = 400 MHz; YS = YS opt
f = 800 MHz; YS = YS opt
f = 200 MHz; GS = 2 mS; BS = BS opt;
GL = 0.5 mS; BL = BL opt; note 1
f = 400 MHz; GS = 2 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
f = 800 MHz; GS = 3.3 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 2
at 0 dB AGC
90
at 10 dB AGC
at 40 dB AGC
105
28
35
2.6 3.1
3
0.9
15
30
5
7
1
1.8
1.9 2.5
32.5
27
21
95
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2001 Apr 25
5
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