BF1211 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BF1211 Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R;
BF1211WR
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier
Excellent low frequency noise performance
Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good
DC stabilization.
APPLICATIONS
Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1211, BF1211R and BF1211WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
handbook, 2 c4olumns
3
1
Top view
BF1211 marking code: LFp
2
MSB014
Fig.1 Simplified outline (SOT143B).
handbook, 2 co3lumns
4
handbook, halfpage
3
4
2
1
Top view
BF1211R marking code: LHp
MSB035
Fig.2 Simplified outline (SOT143R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
cross-modulation
Tj
junction temperature
2003 Dec 16
2
Top view
BF1211WR marking code: MK
1
MSB842
Fig.3 Simplified outline (SOT343R).
CONDITIONS
f = 1 MHz
f = 400 MHz
input level for k = 1% at
40 dB AGC
2
MIN.
25
100
TYP.
30
2.1
15
0.9
105
MAX.
6
30
180
40
2.6
30
1.6
UNIT
V
mA
mW
mS
pF
fF
dB
dBV
150
C
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