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Part Name
Description
BF999 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BF999
Silicon N-Channel MOSFET Triode
Infineon Technologies
BF999 Datasheet PDF : 5 Pages
1
2
3
4
5
BF999
Total power dissipation
P
tot
=
f
(
T
S
)
Output characteristics
I
D
=
f
(
V
DS
)
300
mW
200
150
100
50
00
20 40 60 80 100 120
°C
150
T
S
Gate transconductance
g
fs
=
f
(
V
GS
)
25
BF 999
Ι
D
mA
20
V
GS
= 0.8 V
0.6 V
0.4 V
15
0.2 V
0V
10
-0.2 V
5
-0.4 V
-0.6 V
0
0
5
10
Drain current
I
D
=
f
(
V
GS
)
EHT07308
15 V 20
V
DS
20
BF 999
g
fs
mS
15
10
5
EHT07309
30
BF 999
Ι
D
mA
20
10
EHT07310
0
0
-1
0
1
2 V3
-1
0
V
GS
1
V
2
V
GS
3
Nov-08-2002
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