BFP420F View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BFP420F

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

3

Maximum Ratings

BFP420F

Maximum Ratings

Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Max.

Collector emitter voltage

VCEO

V

Open base

–

4.5

TA = 25 °C

–

4.1

TA = -55 °C

Collector base voltage

VCBO

–

15

V

Open emitter

Collector emitter voltage

VCES

–

15

V

E-B short circuited

Emitter base voltage

VEBO

–

1.5

V

Open collector

Base current

IB

–

9

mA

–

Collector current

IC

–

60

mA

–

Total power dissipation1)

Ptot

–

210

mW

TS ≤ 100 °C

Junction temperature

TJ

–

150

°C

–

Storage temperature

TStg

-55

150

°C

–

1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.

Attention: Stresses above the max. values listed here may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect device

reliability. Maximum ratings are absolute ratings; exceeding only one of these values may

cause irreversible damage to the integrated circuit.

Data Sheet

9

Revision 1.1, 2012-11-07

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