BFP460
Surface mount wideband silicon NPN RF bipolar transistor
Electrical characteristics
Figure 7
Figure 8
24
0.9
dB
20
18
1.8
16
2.4
14
3
12
10
4
5
8
6
6
40
10
20
30
40 mA
60
IC
Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz
24
dB
0.9
20
1.8
16
2.4
12
3
4
8
5
6
40.5 1.0 1.5 2.0 2.5 3.0 3.5
V 4.5
VCE
Maximum power gain Gmax = f(VCE), IC = 20 mA, f = parameter in GHz
Datasheet
10
Revision 2.0
2019-01-25