BFP520F View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BFP520F Datasheet PDF : 9 Pages
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BFP520F
Low profile high gain silicon NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit Note or test condition
Min.
Max.
Collector emitter voltage
Collector emitter voltage
Collector base voltage
Emitter base voltage
Base current
Collector current
Total power dissipation 1)
Junction temperature
Storage temperature
VCEO
–
2.5
V
Open base
2.4
TA = -55 °C, open base
VCES
10
E-B short circuited
VCBO
10
Open emitter
VEBO
1
Open collector
IB
5
mA –
IC
50
Ptot
120
mW TS ≤ 98 °C
TJ
150
°C –
TStg
-55
Attention:
Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
Revision 2.0
2019-01-25
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