BLF147 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BLF147 Datasheet PDF : 15 Pages
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NXP Semiconductors
VHF power MOS transistor
Product specification
BLF147
handbook, h0alfpage
T.C.
(mV/K)
−1
−2
MGP050
−3
−4
−5
10−2
10−1
1
10
ID (A)
VDS = 28 V; valid for Th = 25 to 70 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
60
handbook, halfpage
ID
(A)
40
MGP051
20
0
0
5
10
15 VGS (V) 20
VDS = 10 V.
Fig.5 Drain current as a function of gate-source
voltage; typical values.
handboo1k,7h0alfpage
RDSon
(mΩ)
150
MGP052
130
110
90
0
50
ID = 8 A; VGS = 10 V.
100
150
Tj ( C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
handboo1k4, 0h0alfpage
C
(pF)
1200
MRA903
800
Cis
400
Cos
0
0
10
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
Rev. 06 - 5 December 2006
5 of 15
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