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BR93LC46-W View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
Manufacturer
BR93LC46-W
ROHM
ROHM Semiconductor ROHM
BR93LC46-W Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Memory ICs
BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /
BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W
zElectrical characteristics
For 5V operation (unless otherwise noted, Ta = โˆ’40 to + 85ยฐC, VCC = 5.0V ยฑ 10%)
Parameter
Symbol Min. Typ. Max. Unit
Input low level voltage
VIL
โˆ’0.3
โˆ’
0.8
V
Input high level voltage
VIH
2.0
โˆ’
VCC+0.3 V
Output low level voltage 1 VOL1
โˆ’
โˆ’
0.4
V
Output high level voltage 1 VOH1
2.4
โˆ’
โˆ’
V
Output low level voltage 2 VOL2
โˆ’
โˆ’
0.2
V
Output high level voltage 2 VOH2 VCCโˆ’0.4 โˆ’
โˆ’
V
Input leakage current
ILI
โˆ’1.0
โˆ’
1.0
ยตA
Output leakage current
ILO
โˆ’1.0
โˆ’
1.0
ยตA
Operating current
dissipation 1
ICC1
โˆ’
1.5
3.0
mA
Operating current
dissipation 2
Standby current
ICC2
โˆ’
0.7
1.5
mA
ISB
โˆ’
1.0
5.0
ยตA
Conditions
Measurement circuit
โˆ’
โˆ’
โˆ’
โˆ’
IOL=2.1mA
Fig.3
IOH=โˆ’0.4mA
Fig.4
IOL=10ยตA
Fig.3
IOH=โˆ’10ยตA
Fig.4
VIN=0V~VCC
Fig.5
VOUT=0V~VCC, CS=GND
Fig.6
VIN=VIH / VIL, DO=OPEN,
f=1MHz, WRITE
Fig.7
VIN=VIH / VIL, DO=OPEN,
f=1MHz, READ
Fig.7
CS=SK=DI=GND, DO=OPEN
Fig.8
For 3V operation (unless otherwise noted, Ta = โˆ’40 to + 85ยฐC, VCC = 3.0V ยฑ 10%)
Parameter
Symbol Min. Typ. Max. Unit
Input low level voltage
VIL
โˆ’0.3
โˆ’ 0.15ร—VCC V
Input high level voltage
VIH
0.7ร—VCC
โˆ’
VCC+0.3
V
Output low level voltage
VOL
โˆ’
โˆ’
0.2
V
Output high level voltage
VOH
VCCโˆ’0.4
โˆ’
โˆ’
V
Input leakage current
ILI
โˆ’1.0
โˆ’
1.0
ยตA
Output leakage current
ILO
โˆ’1.0
โˆ’
1.0
ยตA
Conditions
โˆ’
โˆ’
IOL=10ยตA
IOH=โˆ’10ยตA
VIN=0V~VCC
VOUT=0V~VCC, CS=GND
Measurement circuit
โˆ’
โˆ’
Fig.3
Fig.4
Fig.5
Fig.6
Operating current
dissipation 1
VIN=VIH / VIL, DO=OPEN
ICC1
โˆ’
0.5
2.0
mA
f=250kHz, WRITE
Fig.7
Operating current
dissipation 2
VIN=VIH / VIL, DO=OPEN
ICC2
โˆ’
0.2
1.0
mA
f=250kHz, READ
Fig.7
Standby current
ISB
โˆ’
0.4
3.0
ยตA CS=SK=DI=GND, DO=OPEN
Fig.8
For 2V operation (unless otherwise noted, Ta = โˆ’40 to + 85ยฐC, VCC = 2.0V)
Parameter
Symbol Min. Typ. Max. Unit
Input low level voltage
VIL
โˆ’0.3
โˆ’ 0.15ร—VCC V
Input high level voltage
VIH
0.7ร—VCC
โˆ’
VCC+0.3
V
Output low level voltage
VOL
โˆ’
โˆ’
0.2
V
Output high level voltage
VOH
VCCโˆ’0.4
โˆ’
โˆ’
V
Input leakage current
ILI
โˆ’1.0
โˆ’
1.0
ยตA
Output leakage current
ILO
โˆ’1.0
โˆ’
1.0
ยตA
Conditions
โˆ’
โˆ’
IOL=10ยตA
IOH=โˆ’10ยตA
VIN=0V~VCC
VOUT=0V~VCC, CS=GND
Measurement circuit
โˆ’
โˆ’
Fig.3
Fig.4
Fig.5
Fig.6
Operating current
dissipation 2
VIN=VIH / VIL, DO=OPEN
ICC2
โˆ’
0.2
1.0
mA
f=200kHz, READ
Fig.7
Standby current
ISB
โˆ’
0.4
3.0
ยตA CS=SK=DI=GND, DO=OPEN
Fig.8

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