BSP320 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP320

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

BSP 320S

Electrical Characteristics

Parameter

at Tj = 25 ˚C, unless otherwise specified

Thermal Characteristics

Thermal resistance, junction - soldering point (Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area1)

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

-

17

- K/W

K/W

-

110 -

-

-

70

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA

Gate threshold voltage, VGS = VDS

ID = 20 µA

Zero gate voltage drain current

VDS = 60 V, VGS = 0 V, Tj = 25 ˚C

VDS = 60 V, VGS = 0 V, Tj = 150 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = 10 V, ID = 2.9 A

V(BR)DSS 60

-

-V

VGS(th)

2.1

3

4

IDSS

IGSS

µA

-

0.1

1

-

- 100

-

10 100 nA

RDS(on)

- 0.09 0.12 Ω

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

Data Sheet

2

05.99

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