BSP321P View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP321P

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

SIPMOS® Small-Signal-Transistor

Features

• P-Channel

• Enhancement mode

• Normal level

• Avalanche rated

• Pb-free lead plating; RoHS compliant

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

BSP321P

Product Summary

VDS

RDS(on),max

ID

-100 V

900 mW

-0.98 A

PG-SOT-223

Type

BSP321P

Package

PG-SOT-223

Tape and Reel Information

H6327: 1000 pcs/reel

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Continuous drain current

Pulsed drain current

Symbol Conditions

ID

T C=25 °C

I D,pulse

T C=70 °C

T C=25 °C

Marking

BSP321P

Lead free

Yes

Packing

Non dry

Value

Unit

-0.98

A

-0.79

-3.9

Avalanche energy, single pulse

E AS

I D=-0.98 A, R GS=25 W

57

mJ

Gate source voltage

Power dissipation

Operating and storage temperature

V GS

P tot

T C=25 °C

T j, T stg

ESD Class

JESD22-A114-HBM

Soldering temperature

IEC climatic category; DIN IEC 68-1

±20

V

1.8

W

-55 ... 150

°C

1A (250V to 500V)

260 °C

55/150/56

Rev 1.05

page 1

2012-11-27

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