BSP322P(2009) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSP322P Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
10
14 Typ. gate charge
V GS=f(Q gate); I D=-1 A pulsed
parameter: V DD
12
BSP322P
50 V
20 V
10
80 V
8
1
6
25 °C
100 °C
4
125 °C
2
0.1
1
10
100
t AV [µs]
0
1000
0
5
10
15
- Qgate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=-250 µA
16 Gate charge waveforms
120
115
110
105
100
95
90
85
80
75
70
-60 -20
20
60 100 140 180
T j [°C]
V GS
V g s(th)
Q g(th)
Q gs
Rev 1.03
page 7
Qg
Q sw
Q gd
Q gate
2009-02-17
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