BSP324(2003) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP324
(Rev.:2003)

SIPMOS® Power-Transistor

Infineon Technologies 

SIPMOS® Power-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

Rev. 1.0

BSP324

Product Summary

VDS

400 V

RDS(on)

25 Ω

ID

0.17 A

SOT-223

Type

BSP324

Package

SOT-223

Ordering Code Tape and Reel Information Marking

Q67000-S215 E6327: 1000 pcs/reel

BSP324

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

ID puls

dv/dt

IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage

ESD Sensitivity (HBM) as per MIL-STD 883

VGS

Power dissipation

TA=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Ptot

Tj , Tstg

Value

0.17

0.14

0.68

6

±20

Class 1

1.8

-55... +150

55/150/56

Unit

A

kV/µs

V

W

°C

Page 1

2003-02-21

Share Link: