BSP603S2L(2000) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP603S2L
(Rev.:2000)

OptiMOS Small-Signal-Transistor

Infineon Technologies 

Target data sheet

BSP603S2L

OptiMOS=Small-Signal-Transistor

Features

• N-Channel

• Enhancement mode

• Avalanche rated

• Logic Level

• dv/dt rated

Product Summary

Drain source voltage

Drain-source on-state resistance

Continuous drain current

VDS

RDS(on)

ID

55 V

33 mΩ

5.2 A

4

Type

BSP603S2L

Package

SOT-223

Ordering Code

-

Marking

-

Pin 1

G

3

2

1

VPS05163

PIN 2/4 PIN 3

D

S

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA = 25 °C

TA = 70 °C

Pulsed drain current

TA = 25 °C

ID puls

Avalanche energy, single pulse

EAS

ID = 5.2 A , VDD = 25 V, RGS = 25 Ω

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

EAR

dv/dt

IS = 5.2 A, VDS = 40 V, di/dt = 200 A/µs,

Tjmax = 150 °C

Gate source voltage

Power dissipation

TA = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

Value

5.2

4.1

21

150

0.18

6

± 20

1.8

-55...+150

55/150/56

Unit

A

mJ

kV/µs

V

W

°C

Page 1

2000-04-28

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