BSS62 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BSS62

PNP Darlington transistors

Philips Electronics 

Philips Semiconductors

PNP Darlington transistors

Product specification

BSS61; BSS62

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCES

VEBO

IC

ICM

IB

Ptot

Tstg

Tj

Tamb

collector-base voltage

BSS61

BSS62

collector-emitter voltage

BSS61

BSS62

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

VBE = 0

open collector

Tamb ≤ 25 °C

Tcase ≤ 25 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

Rth j-c

thermal resistance from junction to ambient

thermal resistance from junction to case

CONDITIONS

in free air

MIN.

MAX.

UNIT

−

−80

V

−

−90

V

−

−60

V

−

−80

V

−

−5

V

−

−1

A

−

−2

A

−

−100

mA

−

0.8

W

−

5

W

−65

+150

°C

−

200

°C

−65

+150

°C

VALUE

220

35

UNIT

K/W

K/W

1997 May 14

3

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