Philips Semiconductors
PNP Darlington transistors
Product specification
BSS61; BSS62
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
IEBO
hFE
VCEsat
VCEsat
VCEsat
VBEsat
VBEsat
fT
collector cut-off current
BSS61
BSS62
VBE = 0; VCE = −60 V
VBE = 0; VCE = −80 V
−
−
−
−
emitter cut-off current
DC current gain
IC = 0; VEB = −4 V
IC = −150 mA; VCE = −10 V
IC = −500 mA; VCE = −10 V
−
−
1000 −
2000 −
collector-emitter saturation voltage IC = −500 mA; IB = −0.5 mA
−
−
IC = −500 mA; IB = −0.5 mA; Tj = 200 °C −
−
collector-emitter saturation voltage
BSS61
IC = −1 A; IB = −1 mA
IC = −1 A; IB = −1 mA; Tj = 200 °C
−
−
−
−
collector-emitter saturation voltage
BSS62
base-emitter saturation voltage
IC = −1 A; IB = −4 mA
IC = −1 A; IB = −4 mA; Tj = 200 °C
IC = −500 mA; IB = −0.5 mA
−
−
−
−
−
−
base-emitter saturation voltage
BSS61
BSS62
IC = −1 A; IB = −1 mA
IC = −1 A; IB = −4 mA
−
−
−
−
transition frequency
IC = −500 mA; VCE = −5 V; f = 100 MHz −
200
Switching times (between 10% and 90% levels)
−50 nA
−50 nA
−100 nA
−
−
−1.3 V
−1.3 V
−1.6 V
−1.6 V
−1.6 V
−1.6 V
−1.9 V
−2.2 V
−2.2 V
−
MHz
ton
turn-on time
toff
turn-off time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
0.5 −
µs
ICon = −1 A; IBon = −1 mA; IBoff = 1 mA −
0.4 −
µs
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
0.7 −
µs
ICon = −1 A; IBon = −1 mA; IBoff = 1 mA −
1.5 −
µs
1997 May 14
4