Q62702-S636 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q62702-S636

SIPMOS® Small-Signal Transistor

Siemens AG 

BSS 101

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs

0.30 Ptot = 1W

A

0.26

ID 0.24

0.22

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

k

l

j

ihgf

e

d

VGS [V]

a 2.0

b 2.5

c 3.0

d 3.5

e 4.0

f 4.5

c

g 5.0

h 6.0

i 7.0

j 8.0

k 9.0

b l 10.0

0.04

0.02

a

0.00

0 1 2 3 4 5 6 7 8 V 10

VDS

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

50

a

b

Ω

RDS (on) 40

35

30

25

20

c

15

k i gj e dhf

10

VGS [V] =

5a b c d e f g h i j k

2.05 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0

0

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18

ID

Typ. transfer characteristics ID = f(VGS)

parameter: tp = 80 µs

VDS≥ 2 x ID x RDS(on)max

0.32

A

ID

0.24

0.20

0.16

0.12

0.08

0.04

0.00

0 1 2 3 4 5 6 7 8 V 10

VGS

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max

0.24

S

0.20

gfs

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

0.00 0.04 0.08 0.12 0.16 0.20 0.24 A 0.30

ID

Semiconductor Group

6

12/05/1997

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