28LV010RT2DB25 View Datasheet(PDF) - MAXWELL TECHNOLOGIES

Part Name

Description

Manufacturer

28LV010RT2DB25

3.3V 1 Megabit (128K x 8-Bit) EEPROM

MAXWELL TECHNOLOGIES 

3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV010

TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS

(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

PARAMETER

SYMBOL

SUBGROUPS

MIN

MAX

UNIT

Byte Load Cycle

-200

-250

Data Latch Time2

-200

-250

Byte Load Window 2

-200

-250

tBLC

9, 10, 11

1

1

µs

30

30

tDL

9, 10, 11

ns

700

-

750

-

tBL

9, 10, 11

µs

100

--

100

--

Time to Device Busy

-200

-250

tDB

9, 10, 11

ns

100

--

120

--

Write Start Time

-200

-250

RES to Write Setup Time2

-200

-250

VCC to RES Setup Time 2

-200

-250

tDW

9, 10, 11

ns

150

--

250

--

tRP

9, 10, 11

µs

100

--

100

--

tRES

9, 10, 11

1

1

µs

--

--

1. tWC must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the

internal write operation within this value.

2. Guaranteed by design.

TABLE 9. 28LV010 MODE SELECTION1,2

MODE

CE

OE

WE

RES

RDY/BUSY

Read

Standby

Write

Deselect

Write Inhibit

Data Polling

Program

VIL

VIL

VIH

VH

High-Z

VIH

X

X

X

High-Z

VIL

VIH

VIL

VH

High-Z --> VOL

VIL

VIH

VIH

VH

High-Z

X

X

VIH

X

--

X

VIL

X

X

--

VIL

VIL

VIH

VH

VOL

X

X

X

VIL

High-Z

1. X = Don’t care.

2. Refer to the recommended DC operating conditions.

I/O

DOUT

High-Z

DIN

High-Z

--

--

Data Out (I/O7)

High-Z

03.14.03 REV 6

All data sheets are subject to change without notice 6

©2001 Maxwell Technologies

All rights reserved.

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