BTS780 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BTS780

TrilithIC

Siemens AG 

BTS 780

Electrical Characteristics (cont’d)

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V > VS > 18 V

unless otherwise specified

Parameter

Symbol Limit Values Unit Test Condition

min. typ. max.

High-Side-Switches1, 2

Static drain-source

on-resistance

Static drain-source

on-resistance

Leakage current

Clamp-diode

forward-voltage

Clamp-diode leakage-

current (IFH + ISH)

R – DS ON H

R – DS ON H

IHSLK

–

VFH

–

ILKCL

–

35 40 mΩ ISH = 10 A

Tj = 25 °C

–

75 mΩ ISH = 10 A

–

30 µA VGH = VSH = 0 V

0.8 1.5 V IFH = 10 A

–

10 mA IFH = 10 A

Short Circuit to GND

Initial peak SC current

ISCP

47 55 66 A Tj = – 40 °C

Initial peak SC current

ISCP

35 44 54 A Tj = 25 °C

Initial peak SC current

ISCP

28 35 44 A Tj = 85 °C

Initial peak SC current

ISCP

21 26 34 A Tj = 150 °C

Short Circuit to VS

OFF-state

VEO

examiner-voltage

Output pull-down-resistor RO

2

3

4

V

VGH = 0 V

4

10 30 kΩ –

Open Circuit

Detection current

IOCD

0.01 –

1.2 A –

Semiconductor Group

12

1998-02-01

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