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BTS611L1E3128A View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BTS611L1E3128A
Infineon
Infineon Technologies Infineon
BTS611L1E3128A Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PROFET® BTS611L1
Parameter and Conditions, each channel
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions9)
Initial peak short circuit current limit (pin 4 to 1
or 7)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 11)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 10)
Reverse battery voltage drop (Vout > Vbb)
IL = -1.8 A, each channel
Tj=150 °C:
IL(SCp)
IL(SCr)
VON(CL)
Tjt
Tjt
-Vbb
-VON(rev)
Values
Unit
min typ max
5.5 9.5
4.5 7.5
2.5 4.5
--
4
41 47
150
--
-- 10
--
--
-- 610
13 A
11
7
-- A
53 V
-- °C
-- K
32 V
-- mV
Diagnostic Characteristics
Open load detection current
(on-condition)
Open load detection voltage11)
Tj=-40 °C:
Tj=25 ..150°C:
(off-condition)
Tj=-40..150°C:
Internal output pull down
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C
IL (OL)
VOUT(OL)
RO
10
-- 200 mA
10
-- 150
2
3
4V
4 10 30 k
9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
11) External pull up resistor required for open load detection in off state.
Semiconductor Group
5
2003-Oct-01

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