Q67060-S6311 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

Q67060-S6311

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS6510

Overvoltage protection of logic part

+ Vbb

R IN IN

VZ,IN VZ,IS

R bb

Logic

IS

PROFET

VOUT

R IS

RV

V Z,VIS

Signal GND

Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ

nominal. Note that when overvoltage exceeds 71 V typ.

a voltage above 5V can occur between IS and GND, if

RV, VZ,VIS are not used.

Reverse battery protection

- Vbb

Rbb

Vbb disconnect with energized inductive

load

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (VZL < 72 V or

VZb < 30 V if RIN=0). For higher clamp voltages

currents at IN and IS have to be limited to 250 mA.

Version a:

Vbb

V bb

IN

PROFET OUT

IS

VZL

Version b:

IN

Vbb

Vbb

RIN

Logic

OUT

Power

Transistor

IN PROFET OUT

IS

IS

DS

RL

VZb

D

RIS

RV

Signal GND

Power GND

RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse

battery protection in applications with Vbb above

16

V18);

recommended

value:

1

RIN

+

1

RIS

+

1

RV

=

0.1A

1

0.1A

|Vbb| - 12V if DS is not used (or RIN = |Vbb| - 12V if DS is

used).

To minimize power dissipation at reverse battery

operation, the summarized current into the IN and IS

pin should be about 120mA. The current can be

provided by using a small signal diode D in parallel to

the input switch, by using a MOSFET input switch or by

proper adjusting the current through RIS and RV.

Note that there is no reverse battery protection when

using a diode without additional Z-diode VZL, VZb.

Version c: Sometimes a neccessary voltage clamp is

given by non inductive loads RL connected to the same

switch and eliminates the need of clamping circuit:

Vbb

Vbb

RL

IN PROFET OUT

IS

Infineon Technologies AG

Page 8 of 15

2000-Mar-29

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