Q67060-S6311 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
Q67060-S6311 Datasheet PDF : 15 Pages
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Data Sheet BTS6510
Inverse load current operation
Vbb
+
-
VIN
Vbb
- IL
IN PROFET OUT
IS
IIS
VIS
R IS
VOUT +
-
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [µH]
IL[A]
10000
1000
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense feature
is not available during this kind of operation (IIS = 0).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), this power dissipation is decreased to the
much lower value RON(INV) * I2 (specifications see page
4).
Note: Temperature protection during inverse load
current operation is not possible!
100
10
1
10
100
1000
Inductive load switch-off energy
dissipation
E bb
E AS
V bb
V bb
i L(t)
IN PROFET OUT
I IN
IS
RIS
{L
Z L RL
Externally adjustable current limit
ELoad
EL
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC).
ER
Vbb
Vbb
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
RV
IN
Signal
T1
Signal
GND
IN
PROFET OUT
CV
T2
IS
R IS
Rload
Power
GND
Infineon Technologies AG
Page 9 of 15
2000-Mar-29
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