BTS 7740 G
3.3 Electrical Characteristics (cont’d)
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 C < Tj < 150 C; 8 V < VS < 18 V
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Output stages
Inverse diode of high-side VFH
–
switch; Forward-voltage
Inverse diode of lowside VFL
–
switch; Forward-voltage
Static drain-source
on-resistance of highside
switch
R – DS ON H
Static drain-source
on-resistance of lowside
switch
R – DS ON L
Static path on-resistance RDS ON –
0.8 1.2 V IFH = 3 A
0.8 1.2 V IFL = 3 A
110 140 mτ ISH = 1 A
Tj = 25 C
100 120 mτ ISL = 1 A;
VGL = 5 V
Tj = 25 C
–
500
mτ
R + R DS ON H
DS ON L
ISH = 1 A;
Short Circuit of highside switch to GND
Initial peak SC current
ISCP H
8
7
5
9.5 11 A
8
9.5 A
6
7.5 A
Tj = – 40 °C
Tj = + 25 °C
Tj = + 150 °C
Short Circuit of highside switch to VS
Output pull-down-resistor RO
12 22 50 kτ VDSL = 3 V
Short Circuit of lowside switch to VS
Initial peak SC current
ISCP L
12 17 22 A
10 15 20 A
7
10 15 A
Tj = – 40 C
Tj = 25 C
Tj = 150 C
Data Sheet
10
2001-02-01