AS7C3256PFS16A-3.5 View Datasheet(PDF) - Alliance Semiconductor

Part Name

Description

Manufacturer

AS7C3256PFS16A-3.5

3.3V 256K × 16/18 pipeline burst synchronous SRAM

Alliance Semiconductor 

Advance information

AS7C3256PFS16A

AS7C3256PFS18A

®

Parameter

Symbol

Min

Supply voltage

VDD

GND

3.135

0.0

3.3V I/O supply

voltage

2.5V I/O supply

voltage

Input voltages†

Address and

control pins

I/O pins

Ambient operating temperature

VDDQ

GNDQ

VDDQ

GNDQ

VIH

VIL

VIH

VIL

TA

3.135

0.0

2.35

0.0

2.0

–0.5*

2.0

-0.5*

0

* VIL min = -2.0V for pulse width less than 0.2 × t RC.

† Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.

Nominal

3.3

0.0

3.3

0.0

2.5

0.0

–

–

–

–

–

Max

Unit

3.465

V

0.0

3.465

V

0.0

2.65

V

0.0

VDD + 0.3

V

0.8

VDDQ + 0.3 V

0.8

70

°C

Description

Conditions

Thermal resistance

(Junction to Ambient)*

Thermal resistance

(Junction to Top of Case)*

*This parameter is sampled.

Test conditions follow standard test

methods and procedures for measuring

thermal impedance, per EIA/JESD51.

1-layer

4-layer

Symbol

θJA

θJA

θJC

Typical

40

22

8

Units

°C/W

°C/W

°C/W

Description

Junction to Ambient

(airflow of 1m/s)*

Junction to Top of Case*

Junction to Bottom of

Bumps*

*This parameter is sampled.

Conditions

Test conditions follow standard test

methods and procedures for measuring

thermal impedance, per EIA/JESD51.

1-layer

4-layer

Symbol

θJA

θJA

θJC

θJB

Typical

40

25

9

17

Units

°C/W

°C/W

°C/W

°C/W

DID 11-20027-A. 6/8/00

ALLIANCE SEMICONDUCTOR

5

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