Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV27
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICM
Collector current (peak)
IB
Base current
IBM
Base current (peak)
Ptot
Total power dissipation
TC=25℃
Tj
Max.operating junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
·
VALUE
240
120
7
12
20
4
6
85
175
-65~175
UNIT
V
V
V
A
A
A
A
W
℃
℃
MAX
1.76
UNIT
℃/W