BUV27A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUV27A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV27A
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICM
Collector current (peak)
IB
Base current
IBM
Base current (peak)
Ptot
Total power dissipation
TC=25℃
Tj
Max.operating junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
·
VALUE
300
150
7
12
20
4
6
85
175
-65~175
UNIT
V
V
V
A
A
A
A
W
℃
℃
MAX
1.76
UNIT
℃/W
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