BUV42 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
BUV42 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1
VCEsat-2
VCEsat-3
VBEsat-1
VBEsat-2
ICEV
Collector-emitter saturation voltage
IC=2A; IB=0.13A
Tj=100
Collector-emitter saturation voltage
IC=4A; IB=0.4A
Tj=100
Collector-emitter saturation voltage
IC=6A; IB=0.75A
Tj=100
Base-emitter saturation voltage
IC=4A; IB=0.4A
Tj=100
Base-emitter saturation voltage
IC=6A; IB=0.75A
Tj=100
Collector cut-off current
VCE=VCEV; VBE=-1.5V
TC=100
IEBO
Emitter cut-off current
VEB=5V; IC=0
Switching times resistive load
tr
Rise time
ts
Storage time
tf
Fall time
IC=6A ;IB1=0.75A
RB2=3.3@; VCC=200V
VBB=-5V; Tp=30µs
Product Specification
BUV42
MIN TYP. MAX UNIT
250
V
7
V
0.8
0.9
V
0.9
1.2
V
1.2
1.5
V
1.3
V
1.5
V
0.5
2.0
mA
1
mA
0.3
0.4
µs
1.0
1.6
µs
0.15 0.3
µs
2
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