BYG70 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYG70 Datasheet PDF : 6 Pages
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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Preliminary specification
BYG70 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
V(BR)R
IR
trr
Cd
forward voltage
reverse avalanche
breakdown voltage
BYG70D
BYG70G
BYG70J
reverse current
reverse recovery time
diode capacitance
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
IR = 0.1 mA
VR = VRRMmax;
see Fig.6
VR = VRRMmax; Tj = 165 °C;
see Fig.6
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
VR = 0 V; f = 1 MHz
MIN.
−
−
TYP.
−
−
MAX.
2.1
3.6
UNIT
V
V
300
−
500
−
700
−
−
−
−V
−V
−V
5 µA
−
−
100 µA
−
−
30 ns
−
30
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
25
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 05
3
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