DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BYG80 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BYG80 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYG80 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
handbook, 4 columns
cathode
band
k
a
Top view
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF(AV)
IF(AV)
repetitive peak reverse voltage
BYG80A
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
continuous reverse voltage
BYG80A
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
Ttp = 100 °C; see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
Tamb = 60 °C; AL2O3 PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
MIN.
MAX. UNIT
50 V
100 V
150 V
200 V
300 V
400 V
600 V
50 V
100 V
150 V
200 V
300 V
400 V
600 V
2.4 A
2.3 A
2.0 A
1.25 A
1.15 A
0.95 A
1997 Nov 25
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]