BYG80 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYG80 Datasheet PDF : 20 Pages
| |||
Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYG80 series
SYMBOL
PARAMETER
CONDITIONS
IF(AV)
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
Tamb = 60 °C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
IFRM
repetitive peak forward current
Ttp = 100 °C; see Figs 8, 9 and 10
BYG80A to D
BYG80F; BYG80G
BYG80J
IFRM
repetitive peak forward current
Tamb = 60 °C; AL2O3 PCB mounting;
BYG80A to D
see Figs 11, 12 and 13
BYG80F; BYG80G
BYG80J
IFRM
repetitive peak forward current
Tamb = 60 °C; epoxy PCB mounting;
BYG80A to D
see Figs 14, 15 and 16
BYG80F; BYG80G
BYG80J
IFSM
non-repetitive peak forward current t = 8.3 ms half sine wave; Tj = 25 °C
BYG80A to D
prior to surge; VR = VRRMmax
BYG80F; BYG80G; BYG80J
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
Tstg
storage temperature
Tj
junction temperature
see Fig.20
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−65
MAX. UNIT
0.95 A
0.85 A
0.65 A
21 A
21 A
18 A
11 A
11 A
9A
8A
8A
6A
36 A
32 A
10 mJ
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
BYG80A to D
BYG80F; BYG80G
BYG80J
VF
forward voltage
BYG80A to D
BYG80F; BYG80G
BYG80J
CONDITIONS
IF = 1 A; Tj = Tj max;
see Figs 21, 22 and 23
IF = 1 A; see Figs 21, 22 and 23
MIN.
−
−
−
−
−
−
TYP. MAX. UNIT
−
0.67 V
−
0.73 V
−
0.96 V
−
0.93 V
−
0.98 V
−
1.20 V
1997 Nov 25
3
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