BYG80 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYG80 Datasheet PDF : 20 Pages
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Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYG80 series
SYMBOL
PARAMETER
V(BR)R
reverse avalanche
breakdown voltage
BYG80A
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
IR
reverse current
IR
reverse current
BYG80A to D
BYG80F; BYG80G and J
trr
reverse recovery time
BYG80A to D
BYG80F; BYG80G and J
Cd
diode capacitance
BYG80A to D
BYG80F; BYG80G
BYG80J
-d-d--I--tR--
maximum slope of reverse
recovery current
BYG80A to D
BYG80F; BYG80G and J
CONDITIONS
IR = 0.1 mA
VR = VRRMmax;
see Figs 24 and 25
VR = VRRMmax; Tj = 165 °C;
see Figs 24 and 25
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.29
f = 1 MHz; VR = 0; see Fig.26
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.28
MIN.
55
110
165
220
330
440
675
−
−
−
−
−
−
−
−
−
−
TYP. MAX. UNIT
−
−V
−
−V
−
−V
−
−V
−
−V
−
−V
−
−V
− 10
µA
−
100 µA
−
150 µA
−
25 ns
−
50 ns
90
− pF
70
− pF
65
− pF
−
3 A/µs
−
4 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27.
For more information please refer to the “General Part of associated Handbook”.
1997 Nov 25
4
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