DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BYG20D(2020) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
BYG20D
(Rev.:2020)
Vishay
Vishay Semiconductors Vishay
BYG20D Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
BYG20D, BYG20G, BYG20J
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
SMA (DO-214AC)
Cathode
Anode
ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF at IF
trr
ER
TJ max.
Package
1.5 A
200 V, 400 V, 600 V
30 A
1.0 μA
1.4 V
75 ns
20 mJ
150 °C
SMA (DO-214AC)
Circuit configuration
Single
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Soft recovery characteristics
• Ultrafast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
VRRM
Average forward current
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
IF(AV)
IFSM
Pulse energy in avalanche mode, non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range
ER
TJ, TSTG
BYG20D
BYG20D
200
BYG20G
BYG20G
400
1.5
30
20
-55 to +150
BYG20J
BYG20J
600
UNIT
V
A
A
mJ
°C
Revision: 21-Feb-2020
1
Document Number: 88958
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]