BYG24D(2004) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BYG24D Datasheet PDF : 3 Pages
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BYG24
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol Min
Typ.
Max
Unit
Forward voltage
Reverse current
Breakdown voltage
Reverse recovery time
IF = 1 A
VF
IF = 1.5 A
VF
VR = VRRM
IR
VR = VRRM, Tj = 100 °C
IR
IR = 100 µA
BYG 24 D V(BR)R
200
BYG 24 G V(BR)R
400
BYG 24 J
V(BR)R
600
IF = 0.5 A; IR = 1 A; iR = 0.25 A
trr
1.15
V
1.25
V
1
µA
10
µA
V
V
V
140
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
60
RthJA=
50
125K/W
VR = VRRM
40
155K/W
PR–Limit
175K/W
@100%VR
30
20
PR–Limit
@80%VR
10
0
25
50
75 100 125 150
16
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
100.00
10.00
1.00
0.10
Tj=150°C
Tj=25°C
0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0
16826
VF – Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
100
VR = VRRM
10
16825
1
25
50
75 100 125 150
Tj – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
16827
RthJAv=25K/W
VR=VRRM
half sinewave
RthJA=125K/W
RthJA=150K/W
20 40 60 80 100 120 140 160
Tamb – Ambient Temperature ( °C )
Figure 4. Average Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 86067
Rev. 1.2, 19-Oct-04
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